Nexperia PBSS3515VS,115 Dual PNP Transistor, -500 mA, -15 V, 6-Pin SSMini
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-500 mA
Maximum Collector Emitter Voltage
-15 V
Package Type
SSMini
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
280 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
0.6 x 1.7 x 1.3mm
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Zamisliti. Stvoriti. Surađivati
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Cijena na upit
komadno (u pakiranju od 10) (bez PDV-a)
Standard
10
Cijena na upit
komadno (u pakiranju od 10) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-500 mA
Maximum Collector Emitter Voltage
-15 V
Package Type
SSMini
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
280 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
0.6 x 1.7 x 1.3mm
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda