Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-4.9 A
Maximum Collector Emitter Voltage
-30 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
-30 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
100 MHz
Pin Count
3 + Tab
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.7 x 3.7 x 1.8mm
Zemlja podrijetla
China
Detalji o proizvodu
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 44,50
€ 0,89 Each (Supplied on a Reel) (bez PDV-a)
€ 55,62
€ 1,112 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
50
€ 44,50
€ 0,89 Each (Supplied on a Reel) (bez PDV-a)
€ 55,62
€ 1,112 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
50
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 50 - 90 | € 0,89 | € 8,90 |
| 100+ | € 0,84 | € 8,40 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-4.9 A
Maximum Collector Emitter Voltage
-30 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
-30 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
100 MHz
Pin Count
3 + Tab
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.7 x 3.7 x 1.8mm
Zemlja podrijetla
China
Detalji o proizvodu
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


