Nexperia PBSS4160DS,115 Dual NPN Transistor, 1 A, 60 V, 6-Pin TSOP
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
700 mW
Minimum DC Current Gain
250
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
220 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
€ 6,20
€ 0,31 komadno (u pakiranju od 20) (bez PDV-a)
€ 7,75
€ 0,388 komadno (u pakiranju od 20) (s PDV-om)
Standard
20
€ 6,20
€ 0,31 komadno (u pakiranju od 20) (bez PDV-a)
€ 7,75
€ 0,388 komadno (u pakiranju od 20) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
20
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
700 mW
Minimum DC Current Gain
250
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
220 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda