Nexperia PBSS4160T,215 NPN Transistor, 900 mA, 60 V, 3-Pin SOT-23
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
NPN
Maximum DC Collector Current
900 mA
Maximum Collector Emitter Voltage
60 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
220 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
Detalji o proizvodu
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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€ 3,75
€ 0,15 komadno (u pakiranju od 25) (bez PDV-a)
€ 4,69
€ 0,188 komadno (u pakiranju od 25) (s PDV-om)
Standard
25
€ 3,75
€ 0,15 komadno (u pakiranju od 25) (bez PDV-a)
€ 4,69
€ 0,188 komadno (u pakiranju od 25) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
25
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
NPN
Maximum DC Collector Current
900 mA
Maximum Collector Emitter Voltage
60 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
220 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
Detalji o proizvodu
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda