Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
40 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
480 mW
Minimum DC Current Gain
350
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
230 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
Detalji o proizvodu
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 3,40
€ 0,34 komadno (u pakiranju od 10) (bez PDV-a)
€ 4,25
€ 0,425 komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 3,40
€ 0,34 komadno (u pakiranju od 10) (bez PDV-a)
€ 4,25
€ 0,425 komadno (u pakiranju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 10 - 10 | € 0,34 | € 3,40 |
| 20 - 40 | € 0,26 | € 2,60 |
| 50 - 90 | € 0,22 | € 2,20 |
| 100+ | € 0,17 | € 1,70 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
40 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
480 mW
Minimum DC Current Gain
350
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
230 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
Detalji o proizvodu
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


