Nexperia PBSS4520X,135 NPN Transistor, 5 A, 20 V, 4-Pin UPAK
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Tehnički podaci
Proizvođač
NexperiaTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
20 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
125 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.6 x 4.6 x 2.6mm
Zemlja podrijetla
Hong Kong
Detalji o proizvodu
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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Cijena na upit
Each (On a Reel of 4000) (bez PDV-a)
4000
Cijena na upit
Each (On a Reel of 4000) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
4000
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
20 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
125 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.6 x 4.6 x 2.6mm
Zemlja podrijetla
Hong Kong
Detalji o proizvodu
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda