Nexperia PBSS5160U,115 PNP Transistor, -1 A, -60 V, 3-Pin UMT
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-60 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
415 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
185 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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€ 18,60
€ 0,31 Each (Supplied on a Reel) (bez PDV-a)
€ 23,25
€ 0,388 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
60
€ 18,60
€ 0,31 Each (Supplied on a Reel) (bez PDV-a)
€ 23,25
€ 0,388 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
60
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 60 - 100 | € 0,31 | € 6,20 |
| 120+ | € 0,14 | € 2,80 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-60 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
415 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
185 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda