Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-5 A
Maximum Collector Emitter Voltage
-40 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
120 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.7 x 6.7 x 3.7mm
Zemlja podrijetla
China
Detalji o proizvodu
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 11,40
€ 0,57 Each (Supplied on a Reel) (bez PDV-a)
€ 14,25
€ 0,712 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
20
€ 11,40
€ 0,57 Each (Supplied on a Reel) (bez PDV-a)
€ 14,25
€ 0,712 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
20
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 20 - 40 | € 0,57 | € 5,70 |
| 50+ | € 0,53 | € 5,30 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-5 A
Maximum Collector Emitter Voltage
-40 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
120 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.7 x 6.7 x 3.7mm
Zemlja podrijetla
China
Detalji o proizvodu
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


