Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
76 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.47V
Maximum Power Dissipation
1.92 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
RSD 3.070
RSD 61,398 komadno (u pakovanju od 50) (bez PDV-a)
RSD 3.684
RSD 73,678 komadno (u pakovanju od 50) (s PDV-om)
Standard
50
RSD 3.070
RSD 61,398 komadno (u pakovanju od 50) (bez PDV-a)
RSD 3.684
RSD 73,678 komadno (u pakovanju od 50) (s PDV-om)
Standard
50
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
50 - 550 | RSD 61,398 | RSD 3.070 |
600 - 1450 | RSD 33,965 | RSD 1.698 |
1500+ | RSD 30,046 | RSD 1.502 |
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
76 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.47V
Maximum Power Dissipation
1.92 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu