Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
76 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.47V
Maximum Power Dissipation
1.92 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.4mm
Height
1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 156,00
€ 0,26 Each (Supplied on a Reel) (bez PDV-a)
€ 195,00
€ 0,325 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
600
€ 156,00
€ 0,26 Each (Supplied on a Reel) (bez PDV-a)
€ 195,00
€ 0,325 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
600
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po kolut | 
|---|---|---|
| 600 - 1450 | € 0,26 | € 13,00 | 
| 1500+ | € 0,22 | € 11,00 | 
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
76 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.47V
Maximum Power Dissipation
1.92 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.4mm
Height
1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu


