Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.15V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.3mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Width
4.7mm
Minimum Operating Temperature
-55 °C
Height
16mm
Zemlja podrijetla
Philippines
Detalji o proizvodu
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
Cijena na upit
komadno (u pakiranju od 5) (bez PDV-a)
Standard
5
Cijena na upit
komadno (u pakiranju od 5) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.15V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.3mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Width
4.7mm
Minimum Operating Temperature
-55 °C
Height
16mm
Zemlja podrijetla
Philippines
Detalji o proizvodu


