NXP BF510,215 N-Channel JFET, 20 V, Idss 0.7 to 3.0mA, 3-Pin SOT-23

RS kataloški broj:: 166-0535robna marka: NXPProizvođački broj:: BF510,215
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

0.7 to 3.0mA

Maximum Drain Source Voltage

20 V

Maximum Drain Gate Voltage

20V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Height

1mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Maximum Operating Temperature

+150 °C

Length

3mm

Zemlja podrijetla

China

Detalji o proizvodu

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

NXP BF510,215 N-Channel JFET, 20 V, Idss 0.7 to 3.0mA, 3-Pin SOT-23

P.O.A.

NXP BF510,215 N-Channel JFET, 20 V, Idss 0.7 to 3.0mA, 3-Pin SOT-23
Informacije o stanju skladišta trenutno nisu dostupne.

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Tehnička dokumentacija

Tehnički podaci

Proizvođač

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

0.7 to 3.0mA

Maximum Drain Source Voltage

20 V

Maximum Drain Gate Voltage

20V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Height

1mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Maximum Operating Temperature

+150 °C

Length

3mm

Zemlja podrijetla

China

Detalji o proizvodu

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.