Tehnička dokumentacija
Tehnički podaci
Proizvođač
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Provjerite ponovno kasnije.
€ 0,48
komadno (u pakiranju od 10) (bez PDV-a)
€ 0,60
komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 0,48
komadno (u pakiranju od 10) (bez PDV-a)
€ 0,60
komadno (u pakiranju od 10) (s PDV-om)
Standard
10
Kupujte na veliko
količina | jedinična cijena | Po pakiranje |
---|---|---|
10 - 90 | € 0,48 | € 4,80 |
100 - 240 | € 0,39 | € 3,90 |
250 - 990 | € 0,35 | € 3,50 |
1000+ | € 0,30 | € 3,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.