onsemi 2SK3557-7-TB-E N-Channel JFET, 15 V, Idss 16 to 32mA, 3-Pin CP

RS kataloški broj:: 163-2021robna marka: onsemiProizvođački broj:: 2SK3557-7-TB-E
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

16 to 32mA

Maximum Drain Source Voltage

15 V

Maximum Drain Gate Voltage

-15V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

CP

Pin Count

3

Drain Gate On-Capacitance

10pF

Source Gate On-Capacitance

2.9pF

Dimensions

2.9 x 1.5 x 1.1mm

Height

1.1mm

Width

1.5mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Zemlja podrijetla

China

Detalji o proizvodu

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Informacije o stanju skladišta trenutno nisu dostupne.

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€ 0,22

Each (On a Reel of 3000) (bez PDV-a)

€ 0,275

Each (On a Reel of 3000) (s PDV-om)

onsemi 2SK3557-7-TB-E N-Channel JFET, 15 V, Idss 16 to 32mA, 3-Pin CP

€ 0,22

Each (On a Reel of 3000) (bez PDV-a)

€ 0,275

Each (On a Reel of 3000) (s PDV-om)

onsemi 2SK3557-7-TB-E N-Channel JFET, 15 V, Idss 16 to 32mA, 3-Pin CP
Informacije o stanju skladišta trenutno nisu dostupne.

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Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

16 to 32mA

Maximum Drain Source Voltage

15 V

Maximum Drain Gate Voltage

-15V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

CP

Pin Count

3

Drain Gate On-Capacitance

10pF

Source Gate On-Capacitance

2.9pF

Dimensions

2.9 x 1.5 x 1.1mm

Height

1.1mm

Width

1.5mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Zemlja podrijetla

China

Detalji o proizvodu

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.