onsemi 2SK3666-2-TB-E N-Channel JFET, 30 V, Idss 0.6 to 1.5mA, 3-Pin SOT-23

Name: onsemi 2SK3666-2-TB-E N-Channel JFET, 30 V, Idss 0.6 to 1.5mA, 3-Pin SOT-23
Brand: onsemi
SKU: 1455192

RS kataloški broj:: 145-5192robna marka: onsemiProizvođački broj:: 2SK3666-2-TB-E

Prikaži sve u JFETs

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Proizvođač

onsemi

Channel Type

Idss Drain-Source Cut-off Current

0.6 to 1.5mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

200 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

Dimensions

2.9 x 1.5 x 1.1mm

Height

1.1mm

Width

1.5mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Zemlja podrijetla

China

Detalji o proizvodu

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

onsemi 2SK3666-2-TB-E N-Channel JFET, 30 V, Idss 0.6 to 1.5mA, 3-Pin SOT-23

3000

P.O.A.

onsemi 2SK3666-2-TB-E N-Channel JFET, 30 V, Idss 0.6 to 1.5mA, 3-Pin SOT-23

Informacije o stanju skladišta trenutno nisu dostupne.

3000

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Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

Idss Drain-Source Cut-off Current

0.6 to 1.5mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

200 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

Dimensions

2.9 x 1.5 x 1.1mm

Height

1.1mm

Width

1.5mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Zemlja podrijetla

China

Detalji o proizvodu

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.