Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
100 V
Package Type
H-PSOF8L
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
11.78mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
9.9mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Height
2.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V
Zemlja podrijetla
Philippines
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Provjerite ponovno kasnije.
€ 3,00
Each (On a Reel of 2000) (bez PDV-a)
€ 3,75
Each (On a Reel of 2000) (s PDV-om)
2000
€ 3,00
Each (On a Reel of 2000) (bez PDV-a)
€ 3,75
Each (On a Reel of 2000) (s PDV-om)
2000
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
100 V
Package Type
H-PSOF8L
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
11.78mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
9.9mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Height
2.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V
Zemlja podrijetla
Philippines