P-Channel MOSFET, 2.7 A, 150 V, 8-Pin Power 33 onsemi FDMC86261P
Tehnička dokumentacija
Tehnički podaci
Proizvođač
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
150 V
Package Type
Power 33
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
269 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
3.3mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
3.3mm
Transistor Material
Si
Height
0.725mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Cijena na upit
komadno (u pakiranju od 5) (bez PDV-a)
Standard
5
Cijena na upit
komadno (u pakiranju od 5) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
150 V
Package Type
Power 33
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
269 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
3.3mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
3.3mm
Transistor Material
Si
Height
0.725mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda