ON Semiconductor, FJP2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.202V, 3-Pin TO-220

RS kataloški broj:: 864-8956robna marka: ON SemiconductorProizvođački broj:: FJP2145TU
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

ON Semiconductor

Transistor Type

NPN

Maximum DC Collector Current

5 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

120 W

Minimum DC Current Gain

8

Pin Count

3

Minimum Operating Temperature

-55 °C

Dimensions

10.67 x 4.83 x 16.51mm

Maximum Operating Temperature

+125 °C

Detalji o proizvodu

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

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P.O.A.

ON Semiconductor, FJP2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.202V, 3-Pin TO-220

P.O.A.

ON Semiconductor, FJP2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.202V, 3-Pin TO-220
Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

ON Semiconductor

Transistor Type

NPN

Maximum DC Collector Current

5 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

120 W

Minimum DC Current Gain

8

Pin Count

3

Minimum Operating Temperature

-55 °C

Dimensions

10.67 x 4.83 x 16.51mm

Maximum Operating Temperature

+125 °C

Detalji o proizvodu

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više