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ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
59 V
Series
AEC-Q101
Package Type
DPAK
Pin Count
4
Maximum Drain Source Resistance
1.21 Ω
Maximum Gate Threshold Voltage
2.5V
Number of Elements per Chip
2
Transistor Material
Plastic
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
Informacije o stanju skladišta trenutno nisu dostupne.
P.O.A.
Dual Plastic N-Channel MOSFET Transistor, 35 A, 59 V, 4-Pin DPAK onsemi NID9N05BCLT4G
2500
P.O.A.
Dual Plastic N-Channel MOSFET Transistor, 35 A, 59 V, 4-Pin DPAK onsemi NID9N05BCLT4G
Informacije o stanju skladišta trenutno nisu dostupne.
2500
Tehnička dokumentacija
Tehnički podaci
Proizvođač
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
59 V
Series
AEC-Q101
Package Type
DPAK
Pin Count
4
Maximum Drain Source Resistance
1.21 Ω
Maximum Gate Threshold Voltage
2.5V
Number of Elements per Chip
2
Transistor Material
Plastic