Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Width
1.5mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
KM 84,10
KM 0,841 Each (Supplied on a Reel) (bez PDV-a)
KM 98,40
KM 0,984 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
100
KM 84,10
KM 0,841 Each (Supplied on a Reel) (bez PDV-a)
KM 98,40
KM 0,984 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
100
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cijena | Po kolut |
---|---|---|
100 - 225 | KM 0,841 | KM 21,02 |
250 - 475 | KM 0,763 | KM 19,07 |
500 - 975 | KM 0,704 | KM 17,60 |
1000+ | KM 0,665 | KM 16,62 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Width
1.5mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.