Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET with Schottky Diode, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,07
Each (On a Reel of 3000) (bez PDV-a)
€ 0,088
Each (On a Reel of 3000) (s PDV-om)
3000
€ 0,07
Each (On a Reel of 3000) (bez PDV-a)
€ 0,088
Each (On a Reel of 3000) (s PDV-om)
3000
Kupujte na veliko
količina | jedinična cijena | Po kolut |
---|---|---|
3000 - 6000 | € 0,07 | € 210,00 |
9000+ | € 0,04 | € 120,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu