onsemi N-Channel MOSFET, 30 A, 50 V, 3-Pin TO-220AB BUZ11-NR4941

RS kataloški broj:: 761-3515robna marka: onsemiProizvođački broj:: BUZ11-NR4941
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

50 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

16.51mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 10,25

€ 2,05 komadno (u pakiranju od 5) (bez PDV-a)

€ 12,81

€ 2,562 komadno (u pakiranju od 5) (s PDV-om)

onsemi N-Channel MOSFET, 30 A, 50 V, 3-Pin TO-220AB BUZ11-NR4941
Odaberite vrstu pakiranja

€ 10,25

€ 2,05 komadno (u pakiranju od 5) (bez PDV-a)

€ 12,81

€ 2,562 komadno (u pakiranju od 5) (s PDV-om)

onsemi N-Channel MOSFET, 30 A, 50 V, 3-Pin TO-220AB BUZ11-NR4941

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakiranja

Informacije o stanju skladišta trenutno nisu dostupne.

količinajedinična cijenaPo pakiranje
5 - 45€ 2,05€ 10,25
50 - 95€ 1,79€ 8,95
100 - 495€ 1,62€ 8,10
500 - 995€ 1,48€ 7,40
1000+€ 1,40€ 7,00

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

50 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

16.51mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više