onsemi UniFET N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK FDB52N20TM

RS kataloški broj:: 759-8983Probna marka: onsemiProizvođački broj:: FDB52N20TM
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

200 V

Series

UniFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

357 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

49 nC @ 10 V

Width

10.16mm

Transistor Material

Si

Number of Elements per Chip

1

Length

9.98mm

Maximum Operating Temperature

+150 °C

Height

4.572mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 122,50

€ 2,45 Each (Supplied on a Reel) (bez PDV-a)

€ 153,12

€ 3,062 Each (Supplied on a Reel) (s PDV-om)

onsemi UniFET N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK FDB52N20TM
Odaberite vrstu pakiranja

€ 122,50

€ 2,45 Each (Supplied on a Reel) (bez PDV-a)

€ 153,12

€ 3,062 Each (Supplied on a Reel) (s PDV-om)

onsemi UniFET N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK FDB52N20TM

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakiranja

Informacije o stanju skladišta trenutno nisu dostupne.

količinajedinična cijenaPo kolut
50 - 95€ 2,45€ 12,25
100 - 495€ 2,25€ 11,25
500+€ 2,05€ 10,25

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

200 V

Series

UniFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

357 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

49 nC @ 10 V

Width

10.16mm

Transistor Material

Si

Number of Elements per Chip

1

Length

9.98mm

Maximum Operating Temperature

+150 °C

Height

4.572mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više