onsemi PowerTrench Dual N/P-Channel MOSFET, 3.1 A, 3.7 A, 20 V, 6-Pin MicroFET 2 x 2 FDMA1032CZ
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N, P
Maximum Continuous Drain Current
3.1 A, 3.7 A
Maximum Drain Source Voltage
20 V
Package Type
MicroFET 2 x 2
Series
PowerTrench
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
68 mΩ, 95 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Length
2mm
Maximum Operating Temperature
+150 °C
Width
2mm
Transistor Material
Si
Number of Elements per Chip
2
Typical Gate Charge @ Vgs
4 nC @ 4.5 V, 7 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Height
0.75mm
Detalji o proizvodu
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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€ 8,15
€ 1,63 komadno (u pakiranju od 5) (bez PDV-a)
€ 10,19
€ 2,038 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 8,15
€ 1,63 komadno (u pakiranju od 5) (bez PDV-a)
€ 10,19
€ 2,038 komadno (u pakiranju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 5 - 45 | € 1,63 | € 8,15 |
| 50 - 95 | € 1,43 | € 7,15 |
| 100 - 495 | € 1,29 | € 6,45 |
| 500 - 995 | € 1,18 | € 5,90 |
| 1000+ | € 1,11 | € 5,55 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N, P
Maximum Continuous Drain Current
3.1 A, 3.7 A
Maximum Drain Source Voltage
20 V
Package Type
MicroFET 2 x 2
Series
PowerTrench
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
68 mΩ, 95 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Length
2mm
Maximum Operating Temperature
+150 °C
Width
2mm
Transistor Material
Si
Number of Elements per Chip
2
Typical Gate Charge @ Vgs
4 nC @ 4.5 V, 7 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Height
0.75mm
Detalji o proizvodu
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda