Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.67mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Height
15.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Zemlja podrijetla
China
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Provjerite ponovno kasnije.
€ 3,10
komadno (u pakiranju od 2) (bez PDV-a)
€ 3,875
komadno (u pakiranju od 2) (s PDV-om)
2
€ 3,10
komadno (u pakiranju od 2) (bez PDV-a)
€ 3,875
komadno (u pakiranju od 2) (s PDV-om)
2
Kupujte na veliko
količina | jedinična cijena | Po pakiranje |
---|---|---|
2 - 8 | € 3,10 | € 6,20 |
10 - 98 | € 2,65 | € 5,30 |
100 - 248 | € 2,25 | € 4,50 |
250 - 498 | € 2,20 | € 4,40 |
500+ | € 2,15 | € 4,30 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.67mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Height
15.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Zemlja podrijetla
China