Dual N-Channel MOSFET, 6.5 A, 7.9 A, 30 V, 8-Pin SOIC onsemi FDS6986AS

RS kataloški broj:: 671-0677robna marka: onsemiProizvođački broj:: FDS6986AS
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

N

Maximum Continuous Drain Current

6.5 A, 7.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ, 29 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, -16 V, +16 V, +20 V

Typical Gate Charge @ Vgs

10 nC @ 10 V, 12 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Width

3.99mm

Transistor Material

Si

Length

5mm

Series

PowerTrench, SyncFET

Minimum Operating Temperature

-55 °C

Height

1.5mm

Detalji o proizvodu

PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Cijena na upit

komadno (u pakiranju od 5) (bez PDV-a)

Dual N-Channel MOSFET, 6.5 A, 7.9 A, 30 V, 8-Pin SOIC onsemi FDS6986AS
Odaberite vrstu pakiranja

Cijena na upit

komadno (u pakiranju od 5) (bez PDV-a)

Dual N-Channel MOSFET, 6.5 A, 7.9 A, 30 V, 8-Pin SOIC onsemi FDS6986AS

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakiranja

Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

N

Maximum Continuous Drain Current

6.5 A, 7.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ, 29 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, -16 V, +16 V, +20 V

Typical Gate Charge @ Vgs

10 nC @ 10 V, 12 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Width

3.99mm

Transistor Material

Si

Length

5mm

Series

PowerTrench, SyncFET

Minimum Operating Temperature

-55 °C

Height

1.5mm

Detalji o proizvodu

PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više