onsemi N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 FDV303N

RS kataloški broj:: 121-2747robna marka: onsemiProizvođački broj:: FDV303N
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

N

Maximum Continuous Drain Current

680 mA

Maximum Drain Source Voltage

25 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

+8 V

Number of Elements per Chip

1

Width

1.3mm

Length

2.92mm

Typical Gate Charge @ Vgs

1.64 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.93mm

Detalji o proizvodu

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 13,00

€ 0,13 komadno (u pakiranju od 100) (bez PDV-a)

€ 16,25

€ 0,162 komadno (u pakiranju od 100) (s PDV-om)

onsemi N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 FDV303N
Odaberite vrstu pakiranja

€ 13,00

€ 0,13 komadno (u pakiranju od 100) (bez PDV-a)

€ 16,25

€ 0,162 komadno (u pakiranju od 100) (s PDV-om)

onsemi N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 FDV303N

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakiranja

Informacije o stanju skladišta trenutno nisu dostupne.

količinajedinična cijenaPo pakiranje
100 - 400€ 0,13€ 13,00
500 - 900€ 0,11€ 11,00
1000+€ 0,10€ 10,00

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
Možda će vas zanimati

Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

N

Maximum Continuous Drain Current

680 mA

Maximum Drain Source Voltage

25 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

+8 V

Number of Elements per Chip

1

Width

1.3mm

Length

2.92mm

Typical Gate Charge @ Vgs

1.64 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.93mm

Detalji o proizvodu

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
Možda će vas zanimati