Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
115 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.7 x 3.2 x 26.7mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 6,40
komadno (u cijevi od 30) (bez PDV-a)
€ 8,00
komadno (u cijevi od 30) (s PDV-om)
30
€ 6,40
komadno (u cijevi od 30) (bez PDV-a)
€ 8,00
komadno (u cijevi od 30) (s PDV-om)
30
Kupujte na veliko
količina | jedinična cijena | Po cijev |
---|---|---|
30 - 30 | € 6,40 | € 192,00 |
60+ | € 6,15 | € 184,50 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
115 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.7 x 3.2 x 26.7mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.