Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
100 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.5 x 5.5 x 26.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 3,65
komadno (u cijevi od 30) (bez PDV-a)
€ 4,562
komadno (u cijevi od 30) (s PDV-om)
30
€ 3,65
komadno (u cijevi od 30) (bez PDV-a)
€ 4,562
komadno (u cijevi od 30) (s PDV-om)
30
Kupujte na veliko
količina | jedinična cijena | Po cijev |
---|---|---|
30 - 30 | € 3,65 | € 109,50 |
60 - 120 | € 3,40 | € 102,00 |
150 - 270 | € 3,30 | € 99,00 |
300+ | € 3,20 | € 96,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
100 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.5 x 5.5 x 26.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.