onsemi QFET P-Channel MOSFET, 36 A, 150 V, 3-Pin TO-3PN FQA36P15

RS kataloški broj:: 671-4938Probna marka: onsemiProizvođački broj:: FQA36P15
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

P

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

150 V

Package Type

TO-3PN

Series

QFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

294 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.8mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

81 nC @ 10 V

Height

18.9mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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onsemi QFET P-Channel MOSFET, 36 A, 150 V, 3-Pin TO-3PN FQA36P15
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Cijena na upit

onsemi QFET P-Channel MOSFET, 36 A, 150 V, 3-Pin TO-3PN FQA36P15

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PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
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Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

P

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

150 V

Package Type

TO-3PN

Series

QFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

294 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.8mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

81 nC @ 10 V

Height

18.9mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više