onsemi QFET N-Channel MOSFET, 55 A, 100 V, 3-Pin D2PAK FQB55N10TM

RS kataloški broj:: 671-0914robna marka: onsemiProizvođački broj:: FQB55N10TM
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

100 V

Series

QFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

75 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 11,55

€ 2,31 komadno (u pakiranju od 5) (bez PDV-a)

€ 14,44

€ 2,888 komadno (u pakiranju od 5) (s PDV-om)

onsemi QFET N-Channel MOSFET, 55 A, 100 V, 3-Pin D2PAK FQB55N10TM
Odaberite vrstu pakiranja

€ 11,55

€ 2,31 komadno (u pakiranju od 5) (bez PDV-a)

€ 14,44

€ 2,888 komadno (u pakiranju od 5) (s PDV-om)

onsemi QFET N-Channel MOSFET, 55 A, 100 V, 3-Pin D2PAK FQB55N10TM

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakiranja

Informacije o stanju skladišta trenutno nisu dostupne.

količinajedinična cijenaPo pakiranje
5 - 45€ 2,31€ 11,55
50 - 95€ 2,02€ 10,10
100 - 495€ 1,82€ 9,10
500+€ 1,67€ 8,35

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PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

100 V

Series

QFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

75 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više