onsemi ISL9V3040D3ST, Type N-Channel Ignition IGBT, 21 A 430 V, 3-Pin TO-252, Surface
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiProduct Type
Ignition IGBT
Maximum Continuous Collector Current Ic
21A
Maximum Collector Emitter Voltage Vceo
430V
Maximum Power Dissipation Pd
150W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±10 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.2V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
EcoSPARK
Energy Rating
300mJ
Automotive Standard
AEC-Q101
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 120,00
€ 2,40 Each (Supplied on a Reel) (bez PDV-a)
€ 150,00
€ 3,00 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
50
€ 120,00
€ 2,40 Each (Supplied on a Reel) (bez PDV-a)
€ 150,00
€ 3,00 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
50
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 50 - 95 | € 2,40 | € 12,00 |
| 100 - 495 | € 2,15 | € 10,75 |
| 500 - 995 | € 1,97 | € 9,85 |
| 1000+ | € 1,87 | € 9,35 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiProduct Type
Ignition IGBT
Maximum Continuous Collector Current Ic
21A
Maximum Collector Emitter Voltage Vceo
430V
Maximum Power Dissipation Pd
150W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±10 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.2V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
EcoSPARK
Energy Rating
300mJ
Automotive Standard
AEC-Q101
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda