Tehnička dokumentacija
Tehnički podaci
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Maximum Power Dissipation
50 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1200 V
Maximum Emitter Base Voltage
12 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.73 x 6.22 x 2.39mm
Detalji o proizvodu
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 70,543
komad (isporučivo u Reel) (bez PDV-a)
RSD 84,652
komad (isporučivo u Reel) (s PDV-om)
10
RSD 70,543
komad (isporučivo u Reel) (bez PDV-a)
RSD 84,652
komad (isporučivo u Reel) (s PDV-om)
10
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Maximum Power Dissipation
50 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1200 V
Maximum Emitter Base Voltage
12 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.73 x 6.22 x 2.39mm
Detalji o proizvodu
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.