Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
P
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
120 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.29mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Detalji o proizvodu
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Cijena na upit
Each (Supplied as a Tape) (bez PDV-a)
Standard
5
Cijena na upit
Each (Supplied as a Tape) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
P
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
120 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.29mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Detalji o proizvodu


