Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
48 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
16.6 nC @ 5 V
Maximum Operating Temperature
+175 °C
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Detalji o proizvodu
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Cijena na upit
Each (Supplied on a Reel) (bez PDV-a)
Proizvodno pakiranje (kolut)
5
Cijena na upit
Each (Supplied on a Reel) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
5
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
48 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
16.6 nC @ 5 V
Maximum Operating Temperature
+175 °C
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Detalji o proizvodu


