Dual N/P-Channel-Channel MOSFET, 3 A, 3.9 A, 20 V, 8-Pin ChipFET ON Semiconductor NTHC5513T1G
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N, P
Maximum Continuous Drain Current
3 A, 3.9 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
115 mΩ, 240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
2.6 nC @ 4.5 V, 3 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalji o proizvodu
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
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Cijena na upit
Each (Supplied on a Reel) (bez PDV-a)
Proizvodno pakiranje (kolut)
25
Cijena na upit
Each (Supplied on a Reel) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
25
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N, P
Maximum Continuous Drain Current
3 A, 3.9 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
115 mΩ, 240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
2.6 nC @ 4.5 V, 3 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalji o proizvodu
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda