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Tehnički podaci
Proizvođač
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
63 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.28mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Width
15.75mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.82mm
Detalji o proizvodu
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
P.O.A.
20
P.O.A.
20
Tehnička dokumentacija
Tehnički podaci
Proizvođač
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
63 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.28mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Width
15.75mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.82mm
Detalji o proizvodu