Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
P
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
2.18 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.01mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 24,00
€ 0,24 Each (Supplied on a Reel) (bez PDV-a)
€ 30,00
€ 0,30 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
100
€ 24,00
€ 0,24 Each (Supplied on a Reel) (bez PDV-a)
€ 30,00
€ 0,30 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
100
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 100 - 200 | € 0,24 | € 12,00 |
| 250 - 450 | € 0,22 | € 11,00 |
| 500 - 950 | € 0,20 | € 10,00 |
| 1000+ | € 0,18 | € 9,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
P
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
2.18 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.01mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu


