Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
480 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
4.76 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
1.01mm
Zemlja podrijetla
China
€ 420,00
€ 0,14 Each (On a Reel of 3000) (bez PDV-a)
€ 525,00
€ 0,175 Each (On a Reel of 3000) (s PDV-om)
3000
€ 420,00
€ 0,14 Each (On a Reel of 3000) (bez PDV-a)
€ 525,00
€ 0,175 Each (On a Reel of 3000) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
3000
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
480 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
4.76 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
1.01mm
Zemlja podrijetla
China


