Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
1.3mm
Length
2.9mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Detalji o proizvodu
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 2,80
€ 0,28 komadno (u pakiranju od 10) (bez PDV-a)
€ 3,50
€ 0,35 komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 2,80
€ 0,28 komadno (u pakiranju od 10) (bez PDV-a)
€ 3,50
€ 0,35 komadno (u pakiranju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 10 - 90 | € 0,28 | € 2,80 |
| 100 - 240 | € 0,24 | € 2,40 |
| 250 - 490 | € 0,22 | € 2,20 |
| 500 - 990 | € 0,20 | € 2,00 |
| 1000+ | € 0,19 | € 1,90 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
1.3mm
Length
2.9mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Detalji o proizvodu


