Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.9V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.81 nC @ 5 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
China
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,05
Each (On a Reel of 3000) (bez PDV-a)
€ 0,062
Each (On a Reel of 3000) (s PDV-om)
3000
€ 0,05
Each (On a Reel of 3000) (bez PDV-a)
€ 0,062
Each (On a Reel of 3000) (s PDV-om)
3000
Kupujte na veliko
količina | jedinična cijena | Po kolut |
---|---|---|
3000 - 6000 | € 0,05 | € 150,00 |
9000+ | € 0,04 | € 120,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.9V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.81 nC @ 5 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
China