Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 9,75
€ 0,39 Each (Supplied as a Tape) (bez PDV-a)
€ 12,19
€ 0,488 Each (Supplied as a Tape) (s PDV-om)
Standard
25
€ 9,75
€ 0,39 Each (Supplied as a Tape) (bez PDV-a)
€ 12,19
€ 0,488 Each (Supplied as a Tape) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
25
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po traka |
|---|---|---|
| 25 - 75 | € 0,39 | € 9,75 |
| 100 - 225 | € 0,34 | € 8,50 |
| 250 - 475 | € 0,31 | € 7,75 |
| 500 - 975 | € 0,28 | € 7,00 |
| 1000+ | € 0,27 | € 6,75 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu


