Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
P
Maximum Continuous Drain Current
950 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
210 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.7mm
Typical Gate Charge @ Vgs
5.6 nC @ 4.5 V
Height
0.6mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 33,00
€ 0,33 Each (Supplied on a Reel) (bez PDV-a)
€ 41,25
€ 0,412 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
100
€ 33,00
€ 0,33 Each (Supplied on a Reel) (bez PDV-a)
€ 41,25
€ 0,412 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
100
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 100 - 225 | € 0,33 | € 8,25 |
| 250 - 475 | € 0,30 | € 7,50 |
| 500 - 975 | € 0,27 | € 6,75 |
| 1000+ | € 0,26 | € 6,50 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
P
Maximum Continuous Drain Current
950 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
210 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.7mm
Typical Gate Charge @ Vgs
5.6 nC @ 4.5 V
Height
0.6mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu


