Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
162 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
348 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +25 V
Width
4.82mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
56 nC @ 20 V
Maximum Operating Temperature
+175 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4V
Automotive Standard
AEC-Q101
RSD 2.090
RSD 2.090 Each (bez PDV-a)
RSD 2.508
RSD 2.508 Each (s PDV-om)
Standard
1
RSD 2.090
RSD 2.090 Each (bez PDV-a)
RSD 2.508
RSD 2.508 Each (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cena |
---|---|
1 - 9 | RSD 2.090 |
10+ | RSD 1.828 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
162 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
348 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +25 V
Width
4.82mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
56 nC @ 20 V
Maximum Operating Temperature
+175 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4V
Automotive Standard
AEC-Q101