Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
287 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
4 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Height
1.05mm
Series
NVMFS5C604NL
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalji o proizvodu
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 5,05
Each (On a Reel of 1500) (bez PDV-a)
€ 6,312
Each (On a Reel of 1500) (s PDV-om)
1500
€ 5,05
Each (On a Reel of 1500) (bez PDV-a)
€ 6,312
Each (On a Reel of 1500) (s PDV-om)
1500
Tehnička dokumentacija
Tehnički podaci
Proizvođač
onsemiChannel Type
N
Maximum Continuous Drain Current
287 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
4 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Height
1.05mm
Series
NVMFS5C604NL
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalji o proizvodu