Tehnička dokumentacija
Tehnički podaci
Proizvođač
OSRAM Opto SemiconductorsSpectrums Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
12.5µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
120 °
Polarity
NPN
Number of Pins
2
Mounting Type
Surface Mount
Package Type
SMD
Dimensions
2.1 x 1.35 x 0.9mm
Collector Current
20mA
Spectral Range of Sensitivity
350 → 950 nm
Maximum Wavelength Detected
950nm
Minimum Wavelength Detected
350nm
Width
1.35mm
Height
0.9mm
Length
2.1mm
Zemlja podrijetla
Taiwan, Province Of China
Detalji o proizvodu
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.
Ambient Light Sensors, OSRAM Opto Semiconductors
€ 14,80
€ 0,74 komadno (u pakiranju od 20) (bez PDV-a)
€ 18,50
€ 0,925 komadno (u pakiranju od 20) (s PDV-om)
Standard
20
€ 14,80
€ 0,74 komadno (u pakiranju od 20) (bez PDV-a)
€ 18,50
€ 0,925 komadno (u pakiranju od 20) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
20
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 20 - 380 | € 0,74 | € 14,80 |
| 400 - 780 | € 0,45 | € 9,00 |
| 800 - 1480 | € 0,38 | € 7,60 |
| 1500+ | € 0,36 | € 7,20 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
OSRAM Opto SemiconductorsSpectrums Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
12.5µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
120 °
Polarity
NPN
Number of Pins
2
Mounting Type
Surface Mount
Package Type
SMD
Dimensions
2.1 x 1.35 x 0.9mm
Collector Current
20mA
Spectral Range of Sensitivity
350 → 950 nm
Maximum Wavelength Detected
950nm
Minimum Wavelength Detected
350nm
Width
1.35mm
Height
0.9mm
Length
2.1mm
Zemlja podrijetla
Taiwan, Province Of China
Detalji o proizvodu
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.


