Renesas Electronics RJH60D3DPP-M0#T2 IGBT, 35 A 600 V, 3-Pin TO-220FL, Through Hole

RS kataloški broj:: 124-3700robna marka: Renesas ElectronicsProizvođački broj:: RJH60D3DPP-M0#T2
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

Renesas Electronics

Maximum Continuous Collector Current

35 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

40 W

Package Type

TO-220FL

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10 x 4.5 x 15mm

Gate Capacitance

900pF

Maximum Operating Temperature

+150 °C

Zemlja podrijetla

Japan

Detalji o proizvodu

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Renesas Electronics RJH60D3DPP-M0#T2 IGBT, 35 A 600 V, 3-Pin TO-220FL, Through Hole

2

Dostupno u više komada 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

Renesas Electronics RJH60D3DPP-M0#T2 IGBT, 35 A 600 V, 3-Pin TO-220FL, Through Hole
Informacije o stanju skladišta trenutno nisu dostupne.

2

Dostupno u više komada 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Renesas Electronics

Maximum Continuous Collector Current

35 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

40 W

Package Type

TO-220FL

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10 x 4.5 x 15mm

Gate Capacitance

900pF

Maximum Operating Temperature

+150 °C

Zemlja podrijetla

Japan

Detalji o proizvodu

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više