Tehnička dokumentacija
Tehnički podaci
Proizvođač
ROHMChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-59
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
2.9mm
Width
1.6mm
Transistor Material
Si
Height
1.1mm
Zemlja podrijetla
Japan
Detalji o proizvodu
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Cijena na upit
komadno (u pakiranju od 10) (bez PDV-a)
10
Cijena na upit
komadno (u pakiranju od 10) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
10
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
ROHMChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-59
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
2.9mm
Width
1.6mm
Transistor Material
Si
Height
1.1mm
Zemlja podrijetla
Japan
Detalji o proizvodu


