ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole

RS kataloški broj:: 171-5593robna marka: ROHMProizvođački broj:: RGT30NS65DGC9
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

ROHM

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

133 W

Number of Transistors

1

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

780pF

Maximum Operating Temperature

+175 °C

Zemlja podrijetla

Japan

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€ 3,95

komadno (u pakiranju od 5) (bez PDV-a)

€ 4,938

komadno (u pakiranju od 5) (s PDV-om)

ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole

€ 3,95

komadno (u pakiranju od 5) (bez PDV-a)

€ 4,938

komadno (u pakiranju od 5) (s PDV-om)

ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole
Informacije o stanju skladišta trenutno nisu dostupne.

Kupujte na veliko

količinajedinična cijenaPo pakiranje
5 - 45€ 3,95€ 19,75
50 - 95€ 3,60€ 18,00
100 - 245€ 3,40€ 17,00
250 - 495€ 3,25€ 16,25
500+€ 3,10€ 15,50

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Tehnička dokumentacija

Tehnički podaci

Proizvođač

ROHM

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

133 W

Number of Transistors

1

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

780pF

Maximum Operating Temperature

+175 °C

Zemlja podrijetla

Japan