ROHM RGT40NS65DGC9, P-Channel IGBT, 40 A 650 V, 3+Tab-Pin I2PAK, Through Hole

RS kataloški broj:: 171-5627robna marka: ROHMProizvođački broj:: RGT40NS65DGC9
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ROHM

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

161 W

Number of Transistors

1

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1070pF

Maximum Operating Temperature

+175 °C

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P.O.A.

ROHM RGT40NS65DGC9, P-Channel IGBT, 40 A 650 V, 3+Tab-Pin I2PAK, Through Hole

P.O.A.

ROHM RGT40NS65DGC9, P-Channel IGBT, 40 A 650 V, 3+Tab-Pin I2PAK, Through Hole
Informacije o stanju skladišta trenutno nisu dostupne.

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Tehnička dokumentacija

Tehnički podaci

Proizvođač

ROHM

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

161 W

Number of Transistors

1

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1070pF

Maximum Operating Temperature

+175 °C